Publication detail

Diagnostics of the RF Plasma During Organosilicone Thin Layer Deposition

BRANDEJS, K., CIGANEK, M., KRČMA, F., RAŠKOVÁ, Z.

Original Title

Diagnostics of the RF Plasma During Organosilicone Thin Layer Deposition

Type

conference paper

Language

English

Original Abstract

Our work deals with the identification of the main spectral lines and bands measured during the plasma deposition using hexamethyldisiloxane (HMDSO) and tetravinylsilane (TVS) as monomers. The deposition processes were carried out in a pulsed regime with a variable relative pulse duration. At first, the pure monomers were used, furthermore, TVS was mixed in various ratios with oxygen. The changes in intensities and characters of spectra with an increasing of pulse duration and with an increasing of oxygen presence in the working gas mixture has been observed and they are different for some groups of the identified species. In the last part of experiment, exhaust gas was investigated by the gas-chromatography coupled with the mass spectrometry (GC-MS) technique. A new compound or fragment has been observed and the possible reaction schemes are given and briefly discussed.

Keywords

optical emission spectroscopy, CG-MS, tetravinylsilane deposition, effective power

Authors

BRANDEJS, K., CIGANEK, M., KRČMA, F., RAŠKOVÁ, Z.

RIV year

2005

Released

17. 4. 2005

Publisher

Universite Jofeph Fouriere

Location

Grenoble

Pages from

61

Pages to

61

Pages count

1

BibTex

@inproceedings{BUT15350,
  author="Kamil {Brandejs} and Zuzana {Rašková} and František {Krčma} and Miroslav {Ciganek}",
  title="Diagnostics of the RF Plasma During Organosilicone Thin Layer Deposition",
  booktitle="Proceedings of Frontiers in Low Temperature Plasma Diagnostics VI",
  year="2005",
  pages="61--61",
  publisher="Universite Jofeph Fouriere",
  address="Grenoble"
}