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DALLAEV, R.
Original Title
Characterization of aln thin films deposited on thermally processed silicon substrates using pe-ald
English Title
Type
Paper in proceedings (conference paper)
Original Abstract
The aim of this work is to study topography and chemical composition of AlN thin films deposited on Si substrates previously exposed to various time of thermal processing using plasma-enhanced atomic layer deposition technique. The samples were heated up to 500 °C for the period of 2 and 4 hours. Chemical composition of wafers and the films obtained are provided by Xray photoelectron spectroscopy (XPS). Surface topography was investigated using atomic force microscopy (AFM).
English abstract
Keywords
aluminum nitride, atomic layer deposition, atomic force microscopy, Si single crystal wafers, topography, x-ray photoelectron spectroscopy.
Key words in English
Authors
RIV year
2019
Released
25.04.2019
ISBN
978-80-214-5735-5
Book
Proceedings of the 25 th Conference STUDENT EEICT 2019
Edition
doc. Ing. Vítězslav Novák, Ph.D.
Pages from
704
Pages to
709
Pages count
6
BibTex
@inproceedings{BUT156809, author="Rashid {Dallaev}", title="Characterization of aln thin films deposited on thermally processed silicon substrates using pe-ald", booktitle="Proceedings of the 25 th Conference STUDENT EEICT 2019", year="2019", series="doc. Ing. Vítězslav Novák, Ph.D.", pages="704--709", isbn="978-80-214-5735-5" }