Publication detail

Characterization of aln thin films deposited on thermally processed silicon substrates using pe-ald

DALLAEV, R.

Original Title

Characterization of aln thin films deposited on thermally processed silicon substrates using pe-ald

Type

conference paper

Language

English

Original Abstract

The aim of this work is to study topography and chemical composition of AlN thin films deposited on Si substrates previously exposed to various time of thermal processing using plasma-enhanced atomic layer deposition technique. The samples were heated up to 500 °C for the period of 2 and 4 hours. Chemical composition of wafers and the films obtained are provided by Xray photoelectron spectroscopy (XPS). Surface topography was investigated using atomic force microscopy (AFM).

Keywords

aluminum nitride, atomic layer deposition, atomic force microscopy, Si single crystal wafers, topography, x-ray photoelectron spectroscopy.

Authors

DALLAEV, R.

Released

25. 4. 2019

ISBN

978-80-214-5735-5

Book

Proceedings of the 25 th Conference STUDENT EEICT 2019

Edition

doc. Ing. Vítězslav Novák, Ph.D.

Pages from

704

Pages to

709

Pages count

6

BibTex

@inproceedings{BUT156809,
  author="Rashid {Dallaev}",
  title="Characterization of aln thin films deposited on thermally processed silicon substrates using pe-ald",
  booktitle="Proceedings of the 25
th Conference STUDENT EEICT 2019",
  year="2019",
  series="doc. Ing. Vítězslav Novák, Ph.D.",
  pages="704--709",
  isbn="978-80-214-5735-5"
}