Publication detail

0.3V Bulk-driven current conveyor

KHATEB, F. KULEJ, T. KUMNGERN, M.

Original Title

0.3V Bulk-driven current conveyor

Type

journal article in Web of Science

Language

English

Original Abstract

This paper presents the design and the experimental results of a sub 0.5 V bulk-driven (BD) current conveyor (CCII) using 0.18 µm TSMC CMOS technology with total chip area of 0.0134 mm2. All transistors are biased in subthreshold region for low-voltage low-power operation and the input transistors are controlled from their bulk terminals for rail-to-rail input voltage range. The circuit is designed to work with voltage supply (VDD = 0.3V) which is much lower than the threshold voltage of the MOS transistor (VTH=0.5V) while consuming 19 nW of power. The measurement results confirm the proper function of the proposed circuit.

Keywords

Bulk-driven, Low-voltage, Low-power, Sub 0.5-V circuits

Authors

KHATEB, F.; KULEJ, T.; KUMNGERN, M.

Released

15. 5. 2019

Publisher

IEEE

Location

USA

ISBN

2169-3536

Periodical

IEEE Access

Year of study

7

Number

1, IF: 4.098

State

United States of America

Pages from

65122

Pages to

65128

Pages count

7

URL

https://ieeexplore.ieee.org/document/8715344

Full text in the Digital Library

http://hdl.handle.net/11012/173200

BibTex

@article{BUT156873,
  author="Fabian {Khateb} and Tomasz {Kulej} and Montree {Kumngern}",
  title="0.3V Bulk-driven current conveyor",
  journal="IEEE Access",
  year="2019",
  volume="7",
  number="1, IF: 4.098",
  pages="65122--65128",
  doi="10.1109/ACCESS.2019.2916897",
  issn="2169-3536",
  url="https://ieeexplore.ieee.org/document/8715344"
}