Publication detail

Optimizing Bias Point of High Efficiency ClassB GaN Power Amplifier for the Best Efficiency

FIŠER, O. GÖTTHANS, T.

Original Title

Optimizing Bias Point of High Efficiency ClassB GaN Power Amplifier for the Best Efficiency

Type

conference paper

Language

English

Original Abstract

High performance amplifiers are always a demanding component in the world of wireless communication. The amplifier is the heart that drives each radio system. We have designed and developed a high performance one-stage class-B GaN power amplifier for drone applications in the S-band (at 1,6 GHz) with maximum output power 6 W. This paper compare fixed settings of the bias point option and optimized bias point for the best efficiency within the entire output power range. Applying the proposed method, that is particularly advantageous for low power performance to improve efficiency by more than 15 %.

Keywords

GaN, S-band, RF power amplifier, Class-B, PAE, Bias circuit, Matlab

Authors

FIŠER, O.; GÖTTHANS, T.

Released

16. 4. 2019

Publisher

University of Pardubice

Location

Pardubice

ISBN

978-1-5386-9321-6

Book

Microwave and Radio Electronics Week MAREW 2019 29th International Conference Radioelektronika 2019

Pages from

110

Pages to

113

Pages count

4

URL

https://ieeexplore.ieee.org/document/8733566

BibTex

@inproceedings{BUT156997,
  author="Ondřej {Fišer} and Tomáš {Götthans}",
  title="Optimizing Bias Point of High Efficiency ClassB GaN Power Amplifier for the Best Efficiency",
  booktitle="Microwave and Radio Electronics Week MAREW 2019 29th International Conference Radioelektronika 2019",
  year="2019",
  pages="110--113",
  publisher="University of Pardubice",
  address="Pardubice",
  doi="10.1109/RADIOELEK.2019.8733566",
  isbn="978-1-5386-9321-6",
  url="https://ieeexplore.ieee.org/document/8733566"
}