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FRANCESCHI, G. WAGNER, M. HOFINGER, J. KRAJŇÁK, T. SCHMID, M. DIEBOLD, U. RIVA, M.
Original Title
Growth of In2O3(111) thin films with optimized surfaces
Type
journal article in Web of Science
Language
English
Original Abstract
Indium oxide is widely employed in applications ranging from optoelectronics and gas sensing to catalysis, as well as in thin-film heterostructures. To probe the fundamentals of phenomena at the heart of In2O3-based devices that are tied to the intrinsic surface and interface properties of the material, well-defined single-crystalline In2O3 surfaces are needed. We report on how to grow atomically flat In2O3(111) thin films on yttria-stabilized zirconia substrates by pulsed laser deposition. The films are largely relaxed and reproduce the atomic-scale details of the surfaces of single crystals, except for line defects originating from the antiphase domain boundaries that form because of the one-on-four lattice match between the surface unit cells of In2O3(111) and of the substrate. While optimizing the growth conditions, we observe that the morphology of the films is ruled by the oxygen chemical potential, which determines the nature and diffusivity of adspecies during growth.
Keywords
OXIDE; MORPHOLOGY; MOBILITY
Authors
FRANCESCHI, G.; WAGNER, M.; HOFINGER, J.; KRAJŇÁK, T.; SCHMID, M.; DIEBOLD, U.; RIVA, M.
Released
10. 10. 2019
ISBN
2475-9953
Periodical
PHYSICAL REVIEW MATERIALS
Year of study
3
Number
10
State
United States of America
Pages from
103403
Pages to
Pages count
URL
https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.3.103403
BibTex
@article{BUT159387, author="Giada {Franceschi} and Margareta {Wagner} and Jakob {Hofinger} and Tomáš {Krajňák} and Michael {Schmid} and Ulrike {Diebold} and Michele {Riva}", title="Growth of In2O3(111) thin films with optimized surfaces", journal="PHYSICAL REVIEW MATERIALS", year="2019", volume="3", number="10", pages="103403--103403", doi="10.1103/PhysRevMaterials.3.103403", issn="2475-9953", url="https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.3.103403" }