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RAJ, N. KUMAR RANJAN, R. KHATEB, F.
Original Title
Flux-Controlled Memristor Emulator and Its Experimental Results
Type
journal article in Web of Science
Language
English
Original Abstract
A flux-controlled memristor emulator built with off-the-shelf electronic devices and based on a TiO₂ model is presented in this article. The circuit proposed in this article uses the current mode approach based analog building blocks such as a second-generation current conveyor (CCII) and an operational transconductance amplifier (OTA) as an active element with few passive elements. The circuit shows a clear fingerprint of an ideal memristor. The offered emulator circuit can be made to operate in incremental and decremental modes and functions well up to 26.3 MHz. Nonvolatility, Monte Carlo sampling, and corner analysis simulations are executed to verify the robustness of the circuit. The functional verification of the presented circuit is performed using the 0.18-μm CMOS parameter at a supply voltage of ±1.2 V. The experimental demonstration is carried out by making a prototype on a breadboard using ICs AD844AN and CA3080, which exhibits a good agreement with theoretical and simulation results. The layout of the circuit, which requires a total chip area of 75 x 70 μm², is also created. Single/parallel combinations of a memristor, a high-pass filter, and a chaotic system are presented to demonstrate its application.
Keywords
Current mode, Memristor emulator, Pinched hysteresis loop, Chua’s oscillator.
Authors
RAJ, N.; KUMAR RANJAN, R.; KHATEB, F.
Released
1. 3. 2020
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Location
USA
ISBN
1063-8210
Periodical
IEEE Trans. on VLSI Systems.
Year of study
28
Number
4, IF: 2.037
State
United States of America
Pages from
1050
Pages to
1061
Pages count
12
URL
https://doi.org/10.1109/TVLSI.2020.2966292
BibTex
@article{BUT161003, author="Niranjan {Raj} and Rajeev {Kumar Ranjan} and Fabian {Khateb}", title="Flux-Controlled Memristor Emulator and Its Experimental Results", journal="IEEE Trans. on VLSI Systems.", year="2020", volume="28", number="4, IF: 2.037", pages="1050--1061", doi="10.1109/TVLSI.2020.2966292", issn="1063-8210", url="https://doi.org/10.1109/TVLSI.2020.2966292" }