The formation-properties of porous-alumina-embedded hafnium-oxide nanorod arrays

conference paper

English

Hafnium-oxide film with the self-organized nanostructured 3-dimentional architecture is synthesized via the anodizing of thin Al-Hf layers in a phosphoric acid electrolyte. The process involves the growth of a porous alumina film, followed by pore-assisted oxidation of the Hf underlayer. The film consists of HfOx nanorods anchored to continuous hafnium-oxide bottom layer that forms under the pores. Post-anodizing treatments include annealing at 600C in air or vacuum. From the EIS measurements and Mott-Schottky analysis of the as anodized and air-annealed films, the bottom oxide behaves as a good dielectric whereas the nanorods exhibit semiconducting properties. The annealing in vacuum makes the film fully semiconducting, with a unique gradient in film crystal structure, composition, and properties across the film thickness. Potential applications are as dielectrics for electrolytic or on-chip capacitors, and as active layers for gas microsensors

anodizing, porous anodic alumina, hafnium oxide, nanostructure, dielectric, semiconductor, capacitor

MOZALEV, A.; BENDOVÁ, M.; PYTLÍČEK, Z.; LLOBET, E.

24. 6. 2019

University of Zilina in EDIS - Publishing Centre of UZ

Zilina, Slobak republic

978-80-554-1568-0

Proceedings of 7th International Conference on ADVANCES IN ELECTRONIC AND PHOTONIC TECHNOLOGIES

D. Jandura, Ľ. Šušlik, P. Urbancová, J. Kováč

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