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POLAT, Ö. COSKUN, F. M. COSKUN, M. DURMUS, Z. CAGLAR, Y. CAGLAR, M. TURUT, A.
Original Title
Tailoring the band gap of ferroelectric YMnO3 through tuning the Os doping level
Type
journal article in Web of Science
Language
English
Original Abstract
Perovskite-oxide materials have grabbed enormous attention from various research groups all over the world due to their large application areas. The band-gap engineering of those materials are important for optoelectronic researches especially for ferroelectric (FE) solar cells that have unique features such as having higher open circuit voltages than the band gap and their spontaneous polarization which leads to photovoltaic effect. Nevertheless, the most of the perovskite FE materials have wide band gaps that hamper the absorption of large solar spectrum. In the present study, it has been demonstrated the band gap of YMnO3 (YMO), which is one of the mostly studied FE materials, can be tuned via doping osmium (Os) into manganese (Mn) site. The band gap of YMO, 2.10eV successfully is lowered to 1.61eV. Polycrystalline YMnO3 and YMn1-xOsxO3 (YMOO) (x=0.01, 0.05, 0.10) thin films were synthesized on indium tin oxide (ITO) substrates at 500 degrees C by magnetron sputtering method. Their structural, chemical and optical band-gap properties were studied and the results showed the Os doped YMO compounds could be a potential candidate for future ferroelectric solar cell studies.
Keywords
ferroelectrics; materials
Authors
POLAT, Ö.; COSKUN, F. M.; COSKUN, M.; DURMUS, Z.; CAGLAR, Y.; CAGLAR, M.; TURUT, A.
Released
2. 1. 2019
Publisher
SPRINGER
Location
DORDRECHT
ISBN
0957-4522
Periodical
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Year of study
30
Number
4
State
Kingdom of the Netherlands
Pages from
3443
Pages to
3451
Pages count
9
URL
https://link.springer.com/article/10.1007/s10854-018-00619-9
BibTex
@article{BUT161930, author="POLAT, Ö. and COSKUN, F. M. and COSKUN, M. and DURMUS, Z. and CAGLAR, Y. and CAGLAR, M. and TURUT, A.", title="Tailoring the band gap of ferroelectric YMnO3 through tuning the Os doping level", journal="JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS", year="2019", volume="30", number="4", pages="3443--3451", doi="10.1007/s10854-018-00619-9", issn="0957-4522", url="https://link.springer.com/article/10.1007/s10854-018-00619-9" }