Temperature dependent current transport mechanism in osmium-doped perovskite yttrium manganite-based heterojunctions

Temperature dependent current transport mechanism in osmium-doped perovskite yttrium manganite-based heterojunctions

WoS Article

Among the multiferroics, yttrium manganite YMnO3 (YMO) is one of the most frequently studied magnetic ferroelectric oxides and has attracted a great deal of concern, thanks to its potential magnetoelectric features. Furthermore, it has been reported in the literature that yttrium manganite is a useful interface material in thin film devices. It has been documented that the dopant into Y and/or Mn site(s) plays significant roles on the electrical and magnetic properties of YMO. The YMn0.95Os0.05O3 (YMOO) oxide powders were prepared by the well-known solid-state reaction technique. The YMOO thin films were deposited on the p-Si (100) substrate via a radio frequency sputtering method with a thickness of approximately 62nm. The oxidation states of the constituted elements have been investigated by using the X-ray photoelectron spectroscopy method. Furthermore, the surface features of the obtained thin film have been investigated using a scanning electron microscope measurement. The I-V measurements were performed in the 50-310K range, and consequently, the Schottky diodelike reverse and forward bias I-V characteristics were observed in the Al/YMOO/p-Si heterojunction. Moreover, the ideality factor and the barrier height values were calculated as 0.77 and 2.23 at room temperature, respectively.

Among the multiferroics, yttrium manganite YMnO3 (YMO) is one of the most frequently studied magnetic ferroelectric oxides and has attracted a great deal of concern, thanks to its potential magnetoelectric features. Furthermore, it has been reported in the literature that yttrium manganite is a useful interface material in thin film devices. It has been documented that the dopant into Y and/or Mn site(s) plays significant roles on the electrical and magnetic properties of YMO. The YMn0.95Os0.05O3 (YMOO) oxide powders were prepared by the well-known solid-state reaction technique. The YMOO thin films were deposited on the p-Si (100) substrate via a radio frequency sputtering method with a thickness of approximately 62nm. The oxidation states of the constituted elements have been investigated by using the X-ray photoelectron spectroscopy method. Furthermore, the surface features of the obtained thin film have been investigated using a scanning electron microscope measurement. The I-V measurements were performed in the 50-310K range, and consequently, the Schottky diodelike reverse and forward bias I-V characteristics were observed in the Al/YMOO/p-Si heterojunction. Moreover, the ideality factor and the barrier height values were calculated as 0.77 and 2.23 at room temperature, respectively.

YMNO3 THIN-FILMS; RAY PHOTOELECTRON-SPECTROSCOPY; ELECTRICAL CHARACTERISTICS; FERROELECTRIC PROPERTIES; SCHOTTKY DIODE; BARRIER INHOMOGENEITIES; VOLTAGE CHARACTERISTICS; HYDROTHERMAL SYNTHESIS; CONDUCTION; MAGNETISM

YMNO3 THIN-FILMS; RAY PHOTOELECTRON-SPECTROSCOPY; ELECTRICAL CHARACTERISTICS; FERROELECTRIC PROPERTIES; SCHOTTKY DIODE; BARRIER INHOMOGENEITIES; VOLTAGE CHARACTERISTICS; HYDROTHERMAL SYNTHESIS; CONDUCTION; MAGNETISM

Coskun, FM.; Polat, O.; Coskun, M.; Turut, A.; Caglar, M.; Durmus, Z.; Efeoglu, H.

2020

07.06.2019

AMER INST PHYSICS

MELVILLE

1089-7550

Journal of applied physics

125

21

United States of America

214104-1

214104-10

10

https://aip.scitation.org/doi/10.1063/1.5094129