Publication detail

Universal power sequencer for RF power amplifiers

WALDECKER, M.

Original Title

Universal power sequencer for RF power amplifiers

Type

article in a collection out of WoS and Scopus

Language

English

Original Abstract

More often used Gallium Nitride (GaN) based Radio-Frequency high power transistors in the various RF configuration w.g. Doherty is by their nature easily destroyed, great care must be taken, when powering-up and shutting down this circuits. That means, proper power biasing and sequencing is necessary. The Doherty type RF PA with RF drivers four differnet gate, drain voltages and time when when the individual voltages ate turned on and off must be controled. Universal power sequencer and biasing device, which meets this requirements is described.

Keywords

GaN, RF PA, Biasing, Power sequencing

Authors

WALDECKER, M.

Released

6. 5. 2020

Publisher

Vysoké učení technické v Brně, Fakulta elektrotechniky a informačních technologií

ISBN

978-80-214-5868-0

Book

Proceedings II of the 26th Conference STUDENT EEICT 2020

Pages from

126

Pages to

130

Pages count

5

BibTex

@inproceedings{BUT163789,
  author="Miroslav {Waldecker}",
  title="Universal power sequencer for RF power amplifiers",
  booktitle="Proceedings II of the 26th Conference STUDENT EEICT 2020",
  year="2020",
  pages="126--130",
  publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a informačních technologií",
  isbn="978-80-214-5868-0"
}