Publication detail

Zero cross analysis of RTS noise

PAVELKA, J., TACANO, M., TOITA, M., ŠIKULA, J., MUSHA, T.

Original Title

Zero cross analysis of RTS noise

Type

conference paper

Language

English

Original Abstract

RTS noise of Si MOSFETs and GaN HFET was analysed by means of zero cross method. Noise spectral density of crossing events in 1ms to 100s windows was flat over 10mHz to 1kHz frequency without apparent 1/f noise.

Key words in English

RTS noise, MOSFET, zero cross

Authors

PAVELKA, J., TACANO, M., TOITA, M., ŠIKULA, J., MUSHA, T.

RIV year

2005

Released

1. 1. 2005

Publisher

University of Salamanca

Location

Salamanca, Španělsko

ISBN

0-7354-0267-1

Book

Noise and Fluctuations, 18th International Conference on Noise and Fluctuations - ICNF 2005, AIP Conference Proceedings 780

Pages from

217

Pages to

220

Pages count

4

BibTex

@inproceedings{BUT16489,
  author="Jan {Pavelka} and Munecazu {Tacano} and Masato {Toita} and Josef {Šikula} and Toshimitsu {Musha}",
  title="Zero cross analysis of RTS noise",
  booktitle="Noise and Fluctuations, 18th International Conference on Noise and Fluctuations - ICNF 2005, AIP Conference Proceedings 780",
  year="2005",
  pages="4",
  publisher="University of Salamanca",
  address="Salamanca, Španělsko",
  isbn="0-7354-0267-1"
}