Publication result detail

Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN – Numerical Analyses by Quantum Transport

TANIZAKI, H., YAMADA, M., PAVELKA, J.,

Original Title

Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN – Numerical Analyses by Quantum Transport

English Title

Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN – Numerical Analyses by Quantum Transport

Type

Paper in proceedings (conference paper)

Original Abstract

Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement.

English abstract

Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement.

Key words in English

GaN, scattering, mobility

Authors

TANIZAKI, H., YAMADA, M., PAVELKA, J.,

Released

01.01.2002

Publisher

Meisei Univeristy

Location

Tokio

Book

Proceedings of the 13th Symposium on Advanced Materials

Pages from

132

Pages count

4

BibTex

@inproceedings{BUT16522,
  author="H. {Tanizaki} and M. {Yamada} and Jan {Pavelka} and Nobuhisa {Tanuma} and H. {Tanoue} and K. {Tomisawa} and Munecazu {Tacano}",
  title="Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN – Numerical Analyses by Quantum Transport",
  booktitle="Proceedings of the 13th Symposium on Advanced Materials",
  year="2002",
  pages="4",
  publisher="Meisei Univeristy",
  address="Tokio"
}