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Publication detail
GAJDOŠ, A.
Original Title
PEROVSKITE SOLAR CELLS FABRICATION WITH PASSIVATION EFFECT OF HIGH MOBITITY PHENOTHIAZINE-BASED HOLE TRANSPORT LAYER
Type
article in a collection out of WoS and Scopus
Language
English
Original Abstract
Perovskite solar cells are today one of the hottest topics in photovoltaic devices. Compared to traditional c-Si, thin-film CIGS or CdTe solar cells, the fabrication of this type of solar cell is much cheaper, because production does not require ownership of a very expensive equipment and instrumentation. However, it has to be taken into account it has some initial issues as well as other newly developed technologies in the early stages of preparation for a commercial production. This paper deals with a newly synthesized hole transport material as a replacement of commercially avail-able high-cost Spiro-OMETAD transport material. This commercial material has two main issues. Firstly, its production is very expensive and secondly it does not perform a function of a passivation layer for a sensitive perovskite layer. Our newly developed molecule has a positive effect on achiev-ing long-term stable perovskite along with much cheaper production. The produced perovskite solar cell does not achieve highest power conversion efficiency, but they still look promising inf the view of long-term consistent performance.
Keywords
perovskite solar cell, fabrication, HTM, phenothiazine, passivation
Authors
Released
23. 4. 2020
Publisher
Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních
ISBN
978-80-214-5867-3
Book
Proceedings I of the 26th Conference STUDENT EEICT 2020
Pages from
478
Pages to
482
Pages count
5
BibTex
@inproceedings{BUT165342, author="Adam {Gajdoš}", title="PEROVSKITE SOLAR CELLS FABRICATION WITH PASSIVATION EFFECT OF HIGH MOBITITY PHENOTHIAZINE-BASED HOLE TRANSPORT LAYER", booktitle="Proceedings I of the 26th Conference STUDENT EEICT 2020", year="2020", pages="478--482", publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních", isbn="978-80-214-5867-3" }