Publication detail

Estimating the Power BJT Excess Charge Recombination Time Constant

MIKLÁŠ, J.

Original Title

Estimating the Power BJT Excess Charge Recombination Time Constant

Type

article in a collection out of WoS and Scopus

Language

English

Original Abstract

The paper demonstrates an experimental way of estimating the excess minority carrierscharge stored within the the power bipolar transistor in the saturation mode, i.e. with both junctionsforward-biased, as a reference to future IGBT switching action analysis. The method is based onanalyzing the transient turn-off base current waveforms at different conditions right before this event.The base current is known to supply the minority carriers within the device. Estimating the recom-bination time constant serves as a basal precondition for further identification of the excess chargestorage depending on various operating conditions and retrospectively an accurate identification ofpower BJT and IGBT various partial stage of switching action.

Keywords

power BJT, IGBT, saturation, excess charge storage, switching process measurement

Authors

MIKLÁŠ, J.

Released

23. 4. 2020

Publisher

Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií

Location

Brno

ISBN

978-80-214-5867-3

Book

Proceedings I of the 26th Conference STUDENT EEICT 2020

Edition number

1

Pages from

423

Pages to

429

Pages count

7

URL

https://www.fekt.vut.cz/conf/EEICT/archiv/sborniky/EEICT_2020_sbornik_1.pdf

BibTex

@inproceedings{BUT165588,
  author="Ján {Mikláš}",
  title="Estimating the Power BJT Excess Charge Recombination Time Constant",
  booktitle="Proceedings I of the 26th Conference STUDENT EEICT 2020",
  year="2020",
  number="1",
  pages="423--429",
  publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií",
  address="Brno",
  isbn="978-80-214-5867-3",
  url="https://www.fekt.vut.cz/conf/EEICT/archiv/sborniky/EEICT_2020_sbornik_1.pdf"
}