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PEKÁREK, J. GABLECH, I. KLEMPA, J. SVATOŠ, V. SCHNEIDER, M. NEUŽIL, P.
Original Title
Aluminum Nitride with High d33 Piezoelectric Coefficient for MEMS Applications
Type
conference paper
Language
English
Original Abstract
We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films with high d33 piezoelectric coefficient for microelectromechanical systems (MEMS) applications. We used dual Kaufman ion-beam source setup in configuration for reactive sputtering method of AlN thin films. Such AlN was prepared in temperature range between 100 °C and 330 °C. AlN thin films were deposited on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film. We compared their crystallographic and piezoelectric properties. We found out, that the highest crystallographic quality was reached for AlN thin films deposited on (001) preferentially oriented Ti thin films. The well optimized AlN thin film without residual stress reached the d33 value = (7.33 ± 0.08) pC·N−1. It means that such way used for AlN fabrication at low temperature is well suitable for preparation of piezoelectric layer for MEMS and complementary metal-oxide-semiconductor technologies involving integrated circuits. This AlN can be used for sensors as well as actuators.
Keywords
MEMS, d33, AlN
Authors
PEKÁREK, J.; GABLECH, I.; KLEMPA, J.; SVATOŠ, V.; SCHNEIDER, M.; NEUŽIL, P.
Released
2. 12. 2019
Publisher
IEEE
Location
NEW YORK
ISBN
978-1-7281-5638-5
Book
19th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (Power MEMS) Conference Proceedings
Pages from
1
Pages to
4
Pages count
BibTex
@inproceedings{BUT167302, author="Jan {Pekárek} and Imrich {Gablech} and Jaroslav {Klempa} and Vojtěch {Svatoš} and Michael {Schneider} and Pavel {Neužil}", title="Aluminum Nitride with High d33 Piezoelectric Coefficient for MEMS Applications", booktitle="19th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (Power MEMS) Conference Proceedings", year="2019", pages="1--4", publisher="IEEE", address="NEW YORK", isbn="978-1-7281-5638-5" }