Publication detail

Mechanism and Suppression of Physisorbed-Water-Caused Hysteresis in Graphene FET Sensors

BARTOŠÍK, M. MACH, J. PIASTEK, J. NEZVAL, D. KONEČNÝ, M. ŠVARC, V. ENSSLIN, K. ŠIKOLA, T.

Original Title

Mechanism and Suppression of Physisorbed-Water-Caused Hysteresis in Graphene FET Sensors

Type

journal article in Web of Science

Language

English

Original Abstract

Hysteresis is a problem in field-effect transistors (FETs) often caused by defects and charge traps inside a gate isolating (e.g. SiO2) layer. This work shows that graphene-based FETs also exhibit hysteresis due to water physisorbed on top of graphene determined by the relative humidity level, which naturally happens in biosensors and ambient operating sensors. The hysteresis effect is explained by trapping of electrons by physisorbed water, and it is shown that this hysteresis can be suppressed using short pulses of alternating gate voltages.

Keywords

graphene; sensor; relative humidity; water; hysteresis; gate voltage; physisorption

Authors

BARTOŠÍK, M.; MACH, J.; PIASTEK, J.; NEZVAL, D.; KONEČNÝ, M.; ŠVARC, V.; ENSSLIN, K.; ŠIKOLA, T.

Released

25. 9. 2020

Publisher

AMER CHEMICAL SOC

Location

WASHINGTON

ISBN

2379-3694

Periodical

ACS Sensors

Year of study

5

Number

9

State

United States of America

Pages from

2940

Pages to

2949

Pages count

10

URL

https://pubs.acs.org/doi/10.1021/acssensors.0c01441

BibTex

@article{BUT169679,
  author="Miroslav {Bartošík} and Jindřich {Mach} and Jakub {Piastek} and David {Nezval} and Martin {Konečný} and Vojtěch {Švarc} and Klaus {Ensslin} and Tomáš {Šikola}",
  title="Mechanism and Suppression of Physisorbed-Water-Caused Hysteresis in Graphene FET Sensors",
  journal="ACS Sensors",
  year="2020",
  volume="5",
  number="9",
  pages="2940--2949",
  doi="10.1021/acssensors.0c01441",
  issn="2379-3694",
  url="https://pubs.acs.org/doi/10.1021/acssensors.0c01441"
}