Publication result detail

Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods

DALLAEV, R.

Original Title

Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods

English Title

Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods

Type

WoS Article

Original Abstract

Hydrogen impregnation is one of the main sources of contamination in AlN thin films obtained by atomic layer deposition method (ALD) as many studies report. Such impurities can be potentially detrimental to mechanical and electrical properties of the material. In this study methods belonging to ion-beam analysis (IBA) group, namely: elastic recoil detection analysis (ERDA), nuclear reaction analysis (NRA) and secondary-ion mass spectrometry (SIMS) were utilized to examine AlN thin films obtained by plasma-enhanced atomic layer deposition (PE-ALD) with use of trimethylaluminium (TMA) and N2+H2 gas mixture as precursors. Several depositions of AlN layers were carried out with different values of N2+H2 flux intensity (20, 100, 150 sccm) and TMA pulse (0.06, 0.12, 0.15 s) in order to investigate whether such alterations would produce any effect on the resulting films. Data obtained within the scope of this study suggest that AlN grown by PE-ALD exhibit rather low amounts of hydrogen impurities, especially when compared to thermal ALD. Furthermore, the effect of high-temperature treatment in N2 atmosphere was studied and was found out to produce a positive effect on the chemical composition of AlN films.

English abstract

Hydrogen impregnation is one of the main sources of contamination in AlN thin films obtained by atomic layer deposition method (ALD) as many studies report. Such impurities can be potentially detrimental to mechanical and electrical properties of the material. In this study methods belonging to ion-beam analysis (IBA) group, namely: elastic recoil detection analysis (ERDA), nuclear reaction analysis (NRA) and secondary-ion mass spectrometry (SIMS) were utilized to examine AlN thin films obtained by plasma-enhanced atomic layer deposition (PE-ALD) with use of trimethylaluminium (TMA) and N2+H2 gas mixture as precursors. Several depositions of AlN layers were carried out with different values of N2+H2 flux intensity (20, 100, 150 sccm) and TMA pulse (0.06, 0.12, 0.15 s) in order to investigate whether such alterations would produce any effect on the resulting films. Data obtained within the scope of this study suggest that AlN grown by PE-ALD exhibit rather low amounts of hydrogen impurities, especially when compared to thermal ALD. Furthermore, the effect of high-temperature treatment in N2 atmosphere was studied and was found out to produce a positive effect on the chemical composition of AlN films.

Keywords

aluminum nitride; hydrogen impurities; plasma-enhanced atomic layer deposition; elastic recoil detection analysis; nuclear reaction analysis; secondary-ion mass spectrometry

Key words in English

aluminum nitride; hydrogen impurities; plasma-enhanced atomic layer deposition; elastic recoil detection analysis; nuclear reaction analysis; secondary-ion mass spectrometry

Authors

DALLAEV, R.

RIV year

2022

Released

17.08.2021

Publisher

Elsevier

ISBN

0042-207X

Periodical

Vacuum

Volume

193

Number

1

State

United Kingdom of Great Britain and Northern Ireland

Pages from

1

Pages to

9

Pages count

9

URL

https://www.sciencedirect.com/science/article/pii/S0042207X21004826?via%3Dihub

BibTex

@article{BUT172277,
  author="Rashid {Dallaev}",
  title="Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods",
  journal="Vacuum",
  year="2021",
  volume="193",
  number="1",
  pages="1--9",
  doi="10.1016/j.vacuum.2021.110533",
  issn="0042-207X",
  url="https://www.sciencedirect.com/science/article/pii/S0042207X21004826?via%3Dihub"
}