Publication detail

Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfaces

ROTHMAN, A. MANIŠ, J. DUBROVSKII, V. ŠIKOLA, T. MACH, J. JOSLEVICH, E.

Original Title

Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfaces

Type

journal article in Web of Science

Language

English

Original Abstract

The bottom-up assembly of nanowires facilitates the control of their dimensions, structure, orientation and physical properties. Surface-guided growth of planar nanowires has been shown to enable their assembly and alignment on substrates during growth, thus eliminating the need for additional post-growth processes. However, accurate control and understanding of the growth of the planar nanowires were achieved only recently, and only for ZnSe and ZnS nanowires. Here, we study the growth kinetics of surface-guided planar GaN nanowires on flat and faceted sapphire surfaces, based on the previous growth model. The data are fully consistent with the same model, presenting two limiting regimes-either the Gibbs-Thomson effect controlling the growth of the thinner nanowires or surface diffusion controlling the growth of thicker ones. The results are qualitatively compared with other semiconductors surface-guided planar nanowires materials, demonstrating the generality of the growth mechanism. The rational approach enabled by this general model provides better control of the nanowire (NW) dimensions and expands the range of materials systems and possible application of NW-based devices in nanotechnology.

Keywords

gallium nitride; nanowires; guided growth; surface-diffusion

Authors

ROTHMAN, A.; MANIŠ, J.; DUBROVSKII, V.; ŠIKOLA, T.; MACH, J.; JOSLEVICH, E.

Released

1. 3. 2021

Publisher

MDPI

Location

BASEL

ISBN

2079-4991

Periodical

Nanomaterials

Year of study

11

Number

3

State

Swiss Confederation

Pages from

1

Pages to

9

Pages count

9

URL

Full text in the Digital Library

BibTex

@article{BUT174913,
  author="Amnon {Rothman} and Jaroslav {Maniš} and Vladimir G. {Dubrovskii} and Tomáš {Šikola} and Jindřich {Mach} and Ernesto {Joslevich}",
  title="Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfaces",
  journal="Nanomaterials",
  year="2021",
  volume="11",
  number="3",
  pages="1--9",
  doi="10.3390/nano11030624",
  issn="2079-4991",
  url="https://www.mdpi.com/2079-4991/11/3/624"
}