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BURDA, D. ALLAHAM, M. KNÁPEK, A. SOBOLA, D. MOUSA, M.
Original Title
Field emission properties of sharp tungsten cathodes coated with a thin resilient oxide barrier
Type
conference paper
Language
English
Original Abstract
This research is aimed towards more in-depth understanding of field emission properties of tungsten single tip field emitters (STFEs) coated with tens of nanometer thin barrier of selected refractory oxides such as Al 2 O 3 . Introducing the additional barrier into metal-vacuum interface system of the emitter can be beneficial for an improvement of its performance. The pristine tungsten emitters were prepared using a two-step electrochemical drop-off etching technique. Thin oxide barriers were prepared by using low-temperature atomic layer deposition (ALD). Field emission was studied in field emission microscope (FEM) working in UHV vacuum (< 1×10 −7 Pa), experimental field emission data were analyzed by the so-called Murphy-Good plots, revealing the non-orthodox behavior of the prepared emitters.
Keywords
Fabrication; Atomic layer deposition; Microscopy; Tungsten; Voltage; Switches; Finite element analysis
Authors
BURDA, D.; ALLAHAM, M.; KNÁPEK, A.; SOBOLA, D.; MOUSA, M.
Released
17. 11. 2021
Publisher
2021 34th International Vacuum Nanoelectronics Conference (IVNC)
Location
Lyon, France
ISBN
978-1-6654-2589-6
Book
Pages from
178
Pages to
179
Pages count
2
URL
https://ieeexplore.ieee.org/document/9600704/
BibTex
@inproceedings{BUT175016, author="Daniel {Burda} and Mohammad Mahmoud {Allaham} and Alexandr {Knápek} and Dinara {Sobola} and Marwan {Mousa}", title="Field emission properties of sharp tungsten cathodes coated with a thin resilient oxide barrier ", booktitle="2021 34th International Vacuum Nanoelectronics Conference (IVNC)", year="2021", pages="178--179", publisher="2021 34th International Vacuum Nanoelectronics Conference (IVNC)", address="Lyon, France", doi="10.1109/IVNC52431.2021.9600704", isbn="978-1-6654-2589-6", url="https://ieeexplore.ieee.org/document/9600704/" }