Publication detail

Alternative approaches for preparation of AlN nanolayers by atomic layer deposition

DALLAEV, R.

Original Title

Alternative approaches for preparation of AlN nanolayers by atomic layer deposition

Type

dissertation

Language

English

Original Abstract

Aluminum nitride (AlN) is a promising semi-conductive material with a wide band gap. Thin films of AlN find implementation in a variety of electronic and optoelectronic devices. First and foremost, the aim of the research presented within the scope of this dissertation is to introduce new precursors into ALD process for deposition of AlN thin films. The proposed precursors are superior to traditional ones either in cost-efficiency or reactivity. A part of the dissertation is devoted to enhancement of the understanding of chemical processes which take place during and after deposition. In this regard, a working solution to improving the chemical composition of the resulting films, as well as ameliorating deficiencies, for instance, oxidization, has been proposed. Another important aspect of this study has to do with a thorough analysis of hydrogen phenomenon in AlN ALD thin films. Hydrogen impurities have been investigated with the use of accurate and advanced techniques belonging to ion-beam analysis (IBA) groups.

Keywords

Thin films, semiconductor materials, aluminum nitride, atomic layer deposition, chemical composition analysis, ion-beam analysis, silicon substrates, hydrogen impurities, hightemperature annealing, surface characterization

Authors

DALLAEV, R.

Released

30. 6. 2021

Pages from

1

Pages to

108

Pages count

108

BibTex

@phdthesis{BUT176025,
  author="Rashid {Dallaev}",
  title="Alternative approaches for preparation of AlN nanolayers by atomic layer deposition",
  pages="1--108",
  year="2021"
}