Publication detail

Memristors with Initial Low-Resistive State for Efficient Neuromorphic Systems

ZHU, K. MAHMOODI, M. FAHIMI, Z. XIAO, Y. WANG, T. BUKVIŠOVÁ, K. KOLÍBAL, M. ROLDÁN, J. PEREZ, D. AGUIRRE, F. LANZA, M.

Original Title

Memristors with Initial Low-Resistive State for Efficient Neuromorphic Systems

Type

journal article in Web of Science

Language

English

Original Abstract

Memristive electronic synapses are attractive to construct artificial neural networks (ANNs) for neuromorphic computing systems, owing to their excellent electronic performance, high integration density, and low cost. However, the necessity of initializing their conductance through a forming process requires additional peripheral hardware and complex programming algorithms. Herein, the first fabrication of memristors that are initially in low-resistive state (LRS) is reported, which exhibit homogenous initial resistance and switching voltages. When used as electronic synapses in a neuromorphic system to classify images from the CIFAR-10 dataset (Canadian Institute For Advanced Research), the memristors offer x1.83 better throughput per area and consume x0.85 less energy than standard memristors (i.e., with the necessity of forming), which stems from approximate to 63% better density and approximate to 17% faster operation. It is demonstrated in the results that tuning the local properties of materials embedded in memristive electronic synapses is an attractive strategy that can lead to an improved neuromorphic performance at the system level.

Keywords

forming-free devices; low-resistive state; memristors; neuromorphic systems; titanium dioxide

Authors

ZHU, K.; MAHMOODI, M.; FAHIMI, Z.; XIAO, Y.; WANG, T.; BUKVIŠOVÁ, K.; KOLÍBAL, M.; ROLDÁN, J.; PEREZ, D.; AGUIRRE, F.; LANZA, M.

Released

21. 3. 2022

Publisher

Wiley

Location

HOBOKEN

ISBN

2640-4567

Periodical

Advanced Intelligent Systems

Year of study

4

Number

3

State

United States of America

Pages from

2200001

Pages to

220001

Pages count

9

URL

https://onlinelibrary.wiley.com/doi/10.1002/aisy.202200001

Full text in the Digital Library

http://hdl.handle.net/11012/204285

BibTex

@article{BUT177525,
  author="Kaichen {Zhu} and Mohammad Reza {Mahmoodi} and Zahra {Fahimi} and Yiping {Xiao} and Tao {Wang} and Kristýna {Bukvišová} and Miroslav {Kolíbal} and Juan Bautista {Roldán} and David {Perez} and Fernando {Aguirre} and Mario {Lanza}",
  title="Memristors with Initial Low-Resistive State for Efficient Neuromorphic Systems",
  journal="Advanced Intelligent Systems",
  year="2022",
  volume="4",
  number="3",
  pages="2200001--220001",
  doi="10.1002/aisy.202200001",
  issn="2640-4567",
  url="https://onlinelibrary.wiley.com/doi/10.1002/aisy.202200001"
}