Publication detail

Mutual Transformation of Flux-Controlled and Charge-Controlled Memristors

BIOLEK, D. KOHL, Z. VÁVRA, J. BIOLKOVÁ, V. BHARDWAJ, K. SRIVASTAVA, M.

Original Title

Mutual Transformation of Flux-Controlled and Charge-Controlled Memristors

Type

journal article in Web of Science

Language

English

Original Abstract

Two-ports for mutual transformation between flux-controlled memristors and charge-controlled memristors are proposed. Attention is paid to memristors with the region of negative differential memristance in the charge-flux constitutive relation, when such a transformation should be made carefully. Connections between this transformation, duality rules, and Chua's table of higher-order elements are described. The proposed transforming cells can be made up of commercially available integrated circuits. Their proper operation is demonstrated via simulations and lab experiments with memristive oscillators.

Keywords

Memristors; Gyrators; Voltage; Voltage control; Transconductance; Predictive models; Licenses; Charge-controlled memristor; flux-controlled memristor; higher-order element; constitutive relation; oscillator; gyrator; OTA; CCII

Authors

BIOLEK, D.; KOHL, Z.; VÁVRA, J.; BIOLKOVÁ, V.; BHARDWAJ, K.; SRIVASTAVA, M.

Released

27. 6. 2022

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Location

PISCATAWAY

ISBN

2169-3536

Periodical

IEEE Access

Year of study

10

Number

2022

State

United States of America

Pages from

68307

Pages to

68318

Pages count

12

URL

https://ieeexplore.ieee.org/document/9807283

BibTex

@article{BUT178872,
  author="Dalibor {Biolek} and Zdeněk {Kohl} and Jiří {Vávra} and Viera {Biolková} and Kapil {Bhardwaj} and Mayank {Srivastava}",
  title="Mutual Transformation of Flux-Controlled and Charge-Controlled Memristors",
  journal="IEEE Access",
  year="2022",
  volume="10",
  number="2022",
  pages="68307--68318",
  doi="10.1109/ACCESS.2022.3186281",
  issn="2169-3536",
  url="https://ieeexplore.ieee.org/document/9807283"
}