Publication detail

High-Conductivity Stoichiometric Titanium Nitride for Bioelectronics

GABLECH, I. MIGLIACCIO, L. BRODSKÝ, J. HAVLÍČEK, M. PODEŠVA, P. HRDÝ, R. EHLICH, J. GRYSZEL, M. GLOWACKI, E.

Original Title

High-Conductivity Stoichiometric Titanium Nitride for Bioelectronics

Type

journal article in Web of Science

Language

English

Original Abstract

Bioelectronic devices such as neural stimulation and recording devices require stable low-impedance electrode interfaces. Various forms of nitridated titanium are used in biointerface applications due to robustness and biological inertness. In this work, stoichiometric TiN thin films are fabricated using a dual Kaufman ion-beam source setup, without the necessity of substrate heating. These layers are remarkable compared to established forms of TiN due to high degree of crystallinity and excellent electrical conductivity. How this fabrication method can be extended to produce structured AlN, to yield robust AlN/TiN bilayer micropyramids, is described. These electrodes compare favorably to commercial TiN microelectrodes in the performance metrics important for bioelectronics interfaces: higher conductivity (by an order of magnitude), lower electrochemical impedance, and higher capacitive charge injection with lower faradaicity. These results demonstrate that the Kaufman ion-beam sputtering method can produce competitive nitride ceramics for bioelectronics applications at low deposition temperatures.

Keywords

bioelectronics, ion-beam sputtering, multielectrode arrays, titanium nitride

Authors

GABLECH, I.; MIGLIACCIO, L.; BRODSKÝ, J.; HAVLÍČEK, M.; PODEŠVA, P.; HRDÝ, R.; EHLICH, J.; GRYSZEL, M.; GLOWACKI, E.

Released

2. 2. 2023

Publisher

Wiley-VCH GmbH

Location

Německo

ISBN

2199-160X

Periodical

Advanced Electronic Materials

Year of study

9

Number

4

State

Federal Republic of Germany

Pages from

1

Pages to

11

Pages count

11

URL

https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202200980

Full text in the Digital Library

http://hdl.handle.net/11012/213717

BibTex

@article{BUT182433,
  author="Imrich {Gablech} and Ludovico {Migliaccio} and Jan {Brodský} and Marek {Havlíček} and Pavel {Podešva} and Radim {Hrdý} and Jiří {Ehlich} and Maciej {Gryszel} and Eric Daniel {Glowacki}",
  title="High-Conductivity Stoichiometric Titanium Nitride for Bioelectronics",
  journal="Advanced Electronic Materials",
  year="2023",
  volume="9",
  number="4",
  pages="11",
  doi="10.1002/aelm.202200980",
  issn="2199-160X",
  url="https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202200980"
}