Publication detail

Synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation

ČECH, V. BRÁNECKÝ, M.

Original Title

Synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation

Type

journal article in Web of Science

Language

English

Original Abstract

Lower flow rates of precursor molecules are favorable for the synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation and sufficiently high deposition rate. These deposition conditions can be used for both continuous wave (CW) and pulsed plasmas and result in higher consumption of precursor molecules, which is beneficial for industrial applications due to cost reduction. A wider range of power can be used to control the chemical and physical properties of thin-film materials based on power-dependent plasma chemistry. Hydrogenated amorphous silicon carbide films deposited in CW and pulsed plasma are used as an example. The different kinetics of film growth and the role of self-bias voltage in both types of plasma are discussed.

Keywords

degree of dissociation; nonthermal plasma; organosilicon precursors; plasma-enhanced chemical vapor deposition (PE-CVD); sticking coefficient; thin films

Authors

ČECH, V.; BRÁNECKÝ, M.

Released

23. 3. 2023

Publisher

Wiley

ISBN

1612-8869

Periodical

Plasma Processes and Polymers

Year of study

20

Number

7

State

Federal Republic of Germany

Pages from

1

Pages to

11

Pages count

11

URL

https://onlinelibrary.wiley.com/doi/full/10.1002/ppap.202300019

Full text in the Digital Library

http://hdl.handle.net/11012/244276

BibTex

@article{BUT184061,
  author="Vladimír {Čech} and Martin {Bránecký}",
  title="Synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation",
  journal="Plasma Processes and Polymers",
  year="2023",
  volume="20",
  number="7",
  pages="1--11",
  doi="10.1002/ppap.202300019",
  issn="1612-8869",
  url="https://onlinelibrary.wiley.com/doi/full/10.1002/ppap.202300019"
}