Publication detail
Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence
ERICH, M. GLOGINJIC, M. MRAVIK, Ž. VRBAN, B. ČERBA, Š. LÜLEY, J. NEČAS, V. FILOVÁ, V. KATOVSKÝ, K. ŠŤASTNÝ, O. PETROVIC, S.
Original Title
Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence
Type
conference paper
Language
English
Original Abstract
The 6H-SiC samples have been implanted by 4 MeV C and Si ions in the (0001) channeling direction to the sets of multiple implantation fluences. These samples were analyzed via Elastic Backscattering Spectroscopy in the channeling mode (EBS/C) using 1.725 MeV proton beam, from which SiC amorphization depth profiles and averaged integral 6H-SiC amorphization have been obtained. The averaged integral 6H-SiC crystal amorphization vs implanted fluence dependence has been determined for both types of implanted ions. From these dependences, the 6H-SiC integral crystal amorphization vs. implanted fluence/type of implanted atom assessment model have been proposed.
Keywords
6H-SiC; Si ion irradiation; Elastic Backscattering Spectroscopy; ion implementation
Authors
ERICH, M.; GLOGINJIC, M.; MRAVIK, Ž.; VRBAN, B.; ČERBA, Š.; LÜLEY, J.; NEČAS, V.; FILOVÁ, V.; KATOVSKÝ, K.; ŠŤASTNÝ, O.; PETROVIC, S.
Released
5. 5. 2023
Publisher
American Institute of Physics Inc.
Location
AIP College Park, Maryland, USA Physical Science Publishing - AIP Publishing LLC Woodbury, Long Island, NY, USA
ISBN
978-0-7354-4479-9
Book
AIP Conference Proceedings 2778 - 27th Conference on Applied Physics of Condensed Matter (APCOM 2022)
Edition
2778
Edition number
1
ISBN
0094-243X
Periodical
AIP conference proceedings
Year of study
2778
Number
1
State
United States of America
Pages from
1
Pages to
5
Pages count
5
URL
BibTex
@inproceedings{BUT184138,
author="Marko {Erich} and Marko {Gloginjic} and Željko {Mravik} and Branislav {Vrban} and Štefan {Čerba} and Jakub {Lüley} and Vladimír {Nečas} and Vendula {Filová} and Karel {Katovský} and Ondřej {Šťastný} and Srdjan {Petrovic}",
title="Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence",
booktitle="AIP Conference Proceedings 2778 - 27th Conference on Applied Physics of Condensed Matter (APCOM 2022)",
year="2023",
series="2778",
journal="AIP conference proceedings",
volume="2778",
number="1",
pages="1--5",
publisher="American Institute of Physics Inc.",
address="AIP College Park, Maryland, USA
Physical Science Publishing - AIP Publishing LLC
Woodbury, Long Island, NY, USA",
doi="10.1063/5.0136670",
isbn="978-0-7354-4479-9",
issn="0094-243X",
url="https://pubs.aip.org/aip/acp/article/2778/1/060002/2888698/"
}