Publication detail
1/f noise in submicron MOSFETs
HAVRÁNEK, J., SEDLÁK, P.
Original Title
1/f noise in submicron MOSFETs
Type
conference paper
Language
English
Original Abstract
The objectives of this paper are experimental investigations of the nature of the 1/f noise, if the source is mobile carrier number fluctuations or a fluctuation in the mobility. Experiments were performed in low frequency range, where the 1/f noise for submicron structures as MOSFETs and HEMTs is dominant. There are a low number of carriers in the active volume of those nanoscale devices; therefore it is supposed that 1/f noise will be dominant. Thus new valuable experimental results of noise spectral density and its relation like charge carriers mean free path, mobility, dependence on temperature and electric field inten-sity will be obtained.
Key words in English
1/f noise, reliability and lifetime of electronic devices, noise spectral density
Authors
HAVRÁNEK, J., SEDLÁK, P.
RIV year
2006
Released
1. 4. 2006
Publisher
Vienna Universtity of Technology
Location
Vienna
ISBN
3-902463-05-8
Book
Junior Scientist Conference
Pages from
121
Pages to
122
Pages count
2
BibTex
@inproceedings{BUT18420,
author="Jan {Havránek} and Petr {Sedlák}",
title="1/f noise in submicron MOSFETs",
booktitle="Junior Scientist Conference",
year="2006",
pages="2",
publisher="Vienna Universtity of Technology",
address="Vienna",
isbn="3-902463-05-8"
}