Publication detail

Flux method and heterojunction transistors

Vaněk,J.

Original Title

Flux method and heterojunction transistors

Type

conference paper

Language

English

Original Abstract

This paper concerns the overview and basic features of the McKelveys flux method, which forms the physical basis for modeling the complex device physics and description of the carrier transport in modern heterojunction bipolar transistors (HBTs). This method is also available to construct a physical model of the transistor with the quasi-ballistic transport in short base.

Keywords

Flux method, heterostructures

Authors

Vaněk,J.

RIV year

2005

Released

28. 4. 2005

Publisher

Ing. Zdeněk Novotný CSc., Ondráčková 105, Brno

Location

Brno

ISBN

80-214-2888-0

Book

Proceedings of the 11th Conference and Competition STUDENT EEICT 2005 Volume1

Edition number

1

Pages from

222

Pages to

224

Pages count

3

URL

http://www.feec.vutbr.cz/EEICT/2005/sbornik/02-Magisterske_projekty/06-Mikroelektronika_a_technologie/07-xvanek12.pdf

BibTex

@inproceedings{BUT19657,
  author="Jan {Vaněk}",
  title="Flux method and heterojunction transistors",
  booktitle="Proceedings of the 11th Conference and Competition STUDENT EEICT 2005 Volume1",
  year="2005",
  number="1",
  pages="3",
  publisher="Ing. Zdeněk Novotný CSc., Ondráčková 105, Brno",
  address="Brno",
  isbn="80-214-2888-0",
  url="http://www.feec.vutbr.cz/EEICT/2005/sbornik/02-Magisterske_projekty/06-Mikroelektronika_a_technologie/07-xvanek12.pdf"
}