Publication detail

NMOS electrical characterization

RECMAN M.

Original Title

NMOS electrical characterization

Type

conference paper

Language

English

Original Abstract

The HSPICE model parameters extraction of submicrometer NMOS structure is presented. The selected electrical curves are generated by parametrized device simulator DESSIS and substitute for the measured ones in an optimization HSPICE procedure. Electrical simulator HSPICE extracts parameter numerical values of built-in model, simulates electrical curves on the basis of extracted parameters and displays the results. The individual steps to create, mesh and simulate device structure, transform DESSIS output data, extract model parameter values and evaluate results are described.

Keywords

device simulation, circuit simulation, model parameters extraction

Authors

RECMAN M.

RIV year

2005

Released

1. 1. 2005

Publisher

Nakl. Novotný

Location

Brno

ISBN

80-214-3042-7

Book

Socrates Workshop 2005, Intensive Training Programme in Electronic System Design – Proceedings

Pages from

72

Pages to

76

Pages count

5

BibTex

@inproceedings{BUT20415,
  author="Milan {Recman}",
  title="NMOS electrical characterization",
  booktitle="Socrates Workshop 2005, Intensive Training Programme in Electronic System Design – Proceedings",
  year="2005",
  pages="5",
  publisher="Nakl. Novotný",
  address="Brno",
  isbn="80-214-3042-7"
}