Publication detail

Principle of Bulk-Driven MOS Transistor.

KHATEB, F. BIOLEK, D. MUSIL, V.

Original Title

Principle of Bulk-Driven MOS Transistor.

Type

conference paper

Language

English

Original Abstract

Recently, integrated circuit designers have been putting an increasing effort into the reduction of supply voltage and power dissipation of digital, analog and mixed circuits and systems. This is mainly due to the following factors. First of all, the need to reduce power consumption in modern high-density digital systems. As chip components get closer together, the problem of heat dissipation increases while break-down voltages of the components on chip reduce as geometries become smaller. Secondly, the explosive growth of the market of portable battery-operated electronics, which has stimulated the demand for LP topologies able to operate at reduced supplies and to ensure a longer battery lifetime. This paper suggests an elegant approach of Bulk-Driven MOS transistor to reduce the needed voltage supply.

Keywords

Bulk-Driven MOS transistor, low-voltage low-power CMOS

Authors

KHATEB, F.; BIOLEK, D.; MUSIL, V.

Released

25. 4. 2006

Publisher

Izhevsk State Technical University

Location

Izhevsk State

ISBN

5-7526-0261-0

Book

Technical Universities: Integration with European and World Education Systems

Pages from

187

Pages to

190

Pages count

4

BibTex

@inproceedings{BUT21431,
  author="Fabian {Khateb} and Dalibor {Biolek} and Vladislav {Musil}",
  title="Principle of Bulk-Driven MOS Transistor.",
  booktitle="Technical Universities: Integration with European and World Education Systems",
  year="2006",
  pages="4",
  publisher="Izhevsk State Technical University",
  address="Izhevsk State",
  isbn="5-7526-0261-0"
}