Přístupnostní navigace
E-application
Search Search Close
Publication detail
PAVELKA, J. ŠIKULA, J. CHVÁTAL, M. TACANO, M.
Original Title
RTS noise in submicron devices
Type
conference paper
Language
English
Original Abstract
Low frequency noise of Si MOSFET, GaN/AlGaN and InGaAs/InAlAs heterostructure devices was measured, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method and in most samples revealed almost constant spectral density of crossing rate fluctuation, although non-Poisson mechanism of charge carrier capture and emission was observed in the InGaAs sample, resulting in pulse length correlation and periodical crossing rate modulation.
Keywords
RTS noise, 1/f noise, MOSFET, HFET, GaN, InGaAs
Authors
PAVELKA, J.; ŠIKULA, J.; CHVÁTAL, M.; TACANO, M.
RIV year
2007
Released
15. 11. 2007
Publisher
VUT
Location
Brno
ISBN
978-80-7355-078-3
Book
New Trends in Physics
Pages from
114
Pages to
117
Pages count
4
BibTex
@inproceedings{BUT27882, author="Jan {Pavelka} and Josef {Šikula} and Miloš {Chvátal} and Munecazu {Tacano}", title="RTS noise in submicron devices", booktitle="New Trends in Physics", year="2007", pages="114--117", publisher="VUT", address="Brno", isbn="978-80-7355-078-3" }