Publication result detail

Si Diode - Determination of Generation and Recombination Coefficients

RAŠKA, M.; PALAI-DANY, T.

Original Title

Si Diode - Determination of Generation and Recombination Coefficients

English Title

Si Diode - Determination of Generation and Recombination Coefficients

Type

Paper in proceedings (conference paper)

Original Abstract

The article deals with a study microplasma regions which is characterized by bistable current noise, microplasma noise. The microplasma noise is possible to describe with two state stochastic process of generation - recombination type. The cofficients generation and recombination can be determined by several methods, which are inside the article.

English abstract

The article deals with a study microplasma regions which is characterized by bistable current noise, microplasma noise. The microplasma noise is possible to describe with two state stochastic process of generation - recombination type. The cofficients generation and recombination can be determined by several methods, which are inside the article.

Keywords

microplasma, breakdown, PN junction, diode, recombination, generation

Key words in English

microplasma, breakdown, PN junction, diode, recombination, generation

Authors

RAŠKA, M.; PALAI-DANY, T.

Released

13.08.2007

Publisher

University of Miskolc

Location

Miskolc, Hungary

ISBN

978-963-661-779-0

Book

6th International Conference of Phd Students

Edition

1

Pages from

361

Pages to

366

Pages count

5

BibTex

@inproceedings{BUT28769,
  author="Michal {Raška} and Tomáš {Palai-Dany}",
  title="Si Diode - Determination of Generation and Recombination Coefficients",
  booktitle="6th International Conference of Phd Students",
  year="2007",
  series="1",
  number="1",
  pages="361--366",
  publisher="University of Miskolc",
  address="Miskolc, Hungary",
  isbn="978-963-661-779-0"
}