Publication detail

Niobium Oxide and Tantalum Capacitors: M-I-S Model Parameters Comparison

ŠIKULA, J. HLÁVKA, J. SEDLÁKOVÁ, V. HÖSCHEL, P. GRILL, R. SITA, Z. ZEDNÍČEK, T. TACANO, M.

Original Title

Niobium Oxide and Tantalum Capacitors: M-I-S Model Parameters Comparison

Type

conference paper

Language

English

Original Abstract

An analysis of charge carrier transport and charge storage in NbO and Ta capacitors was performed. An aim of this paer is to characterise the active region quality of NbO and Ta capacitors.

Keywords

Capacitor, NbO, Ta, MIS

Authors

ŠIKULA, J.; HLÁVKA, J.; SEDLÁKOVÁ, V.; HÖSCHEL, P.; GRILL, R.; SITA, Z.; ZEDNÍČEK, T.; TACANO, M.

RIV year

2005

Released

1. 1. 2005

ISBN

0887-7491

Periodical

Capacitor and Resistor Technology

Year of study

2005

Number

3

State

United States of America

Pages from

244

Pages to

248

Pages count

5

BibTex

@inproceedings{BUT31370,
  author="Josef {Šikula} and Jan {Hlávka} and Vlasta {Sedláková} and Pavel {Höschel} and Roman {Grill} and Zdeněk {Sita} and Tomáš {Zedníček} and Munecazu {Tacano}",
  title="Niobium Oxide and Tantalum Capacitors: M-I-S Model Parameters Comparison",
  booktitle="25th Capacitor and Resistor Technology Symposium",
  year="2005",
  journal="Capacitor and Resistor Technology",
  volume="2005",
  number="3",
  pages="5",
  issn="0887-7491"
}