Publication detail

Modelling of the Czochralski flow

FRANCŮ, J.

Original Title

Modelling of the Czochralski flow

Type

journal article - other

Language

English

Original Abstract

Czochralski method of industrial production of silicon single crystal consists in pulling up the single crystal from Silicon melt. The flow of the melt during this production is called Czochralski flow. Its character determines concentration of desired oxygen impurity in the crystal. The mathematical description of the Czochralski flow consists of a coupled system of six P.D.E. in cylindrical coordinates containing Navier-Stokes equations (with the stream function), heat convection-conduction equation, convection-diffusion equation for oxygen impurity and an equation describing magnetic field effect. The paper contains derivation of the model, its weak and operator formulation, its justification and proof of existence of solution to the both stationary and evolutionary problems.

Keywords

Czochralski flow, mathematical modelling, weak formulation

Authors

FRANCŮ, J.

RIV year

1998

Released

1. 1. 1998

ISBN

1085-3375

Periodical

Abstract and Applied Analysis

Year of study

3

Number

1-2

State

United States of America

Pages from

1

Pages to

40

Pages count

40

BibTex

@article{BUT38838,
  author="Jan {Franců}",
  title="Modelling of the Czochralski flow",
  journal="Abstract and Applied Analysis",
  year="1998",
  volume="3",
  number="1-2",
  pages="1--40",
  issn="1085-3375"
}