Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements

journal article - other

English

The Si surface of the wide band semiconductor n-SiC is plasma etched in order to smooth the substrates. Low frequency current noise characteristics are investigated in wide temperature range. Current noise increases with sample current and the number of electrons in active region is estimated from resistance and Hooge parameter.

Noise, SiC, Ni/n-SiC Contact

TANUMA, N., YASUKAWA, S., YOKOKURA, S., HASHIGUCHI, S., ŠIKULA, J., MATSUI, T., TACANO, M.

2001

1. 1. 2001

0021-4922

Japanese Journal of Applied Physics

40

6A

Japan

3979

3984

6