Publication detail

Growth of SiCAlN on Si(111) via a crystalline oxide interface

TOLLE, J., ROUČKA, R., CROZIER, P., CHIZMESHYA, A., TSONG, I., KOUVETAKIS, J.

Original Title

Growth of SiCAlN on Si(111) via a crystalline oxide interface

Type

journal article - other

Language

English

Original Abstract

Growth of single-phase SiCAlN epitaxial films with the 2H-wurtzite structure is conducted directly on Si(111) despite the structural differences and large lattice mismatch (19%) between the two materials. Commensurate heteroepitaxy is facilitated by the conversion of native and thermally grown SiO2 layers on Si(111) into crystalline oxides by in situ reactions of the layers with Al atoms and the H3SiCN precursor, forming coherent interfaces with the Si substrate and the film. High-resolution transmission electron microscopy and electron energy-loss spectroscopy show that the amorphous SiO2 films are entirely transformed into a crystalline Si-Al-O-N framework in registry with the Si(111) surface. This crystalline interface acts as a template for nucleation and growth of epitaxial SiCAlN. Integration of wide-band-gap semiconductors with Si is readily achieved by this process. (C) 2002 American Institute of Physics.

Key words in English

SILICON, FILMS

Authors

TOLLE, J., ROUČKA, R., CROZIER, P., CHIZMESHYA, A., TSONG, I., KOUVETAKIS, J.

RIV year

2002

Released

16. 9. 2002

ISBN

0003-6951

Periodical

Applied Physics Letters

Year of study

81

Number

12

State

United States of America

Pages from

2181

Pages to

2183

Pages count

3

BibTex

@article{BUT40943,
  author="J. {Tolle} and Radek {Roučka} and P. {Crozier} and A. {Chizmeshya} and I. {Tsong} and J. {Kouvetakis}",
  title="Growth of SiCAlN on Si(111) via a crystalline oxide interface",
  journal="Applied Physics Letters",
  year="2002",
  volume="81",
  number="12",
  pages="3",
  issn="0003-6951"
}