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OTEVŘELOVÁ, D. GRMELA, L. TOMÁNEK, P. BRÜSTLOVÁ, J.
Original Title
Photoluminescence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells
Type
journal article in Web of Science
Language
English
Original Abstract
Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaAlAs/GaAs heterojunctions. Room temperature photo-luminescence of multiple GaAlAs wells with GaAs barriers was measured as a function of a facet of device perpendicular to the layer structure The scanning near-field optical microscope is applied for the diagnostics of the defects in semiconductor devices for instance in a multiple quantum well grown by molecular beam epitaxy. Our high resolution studies reveal that the radiative recombination for the GaAlAs quantum well is approx. 50 times more efficient than for the underlying GaAs film. The comparison of the Far-field and Near-field characteristics of measured quantities are also given.
Keywords
Local photoluminescence, scanning near-field optical microscopy, quantum well, superresolution
Authors
OTEVŘELOVÁ, D.; GRMELA, L.; TOMÁNEK, P.; BRÜSTLOVÁ, J.
RIV year
2003
Released
1. 9. 2003
Publisher
SPIE
Location
Bellingham, USA
ISBN
0277-786X
Periodical
Proceedings of SPIE
Year of study
5036
Number
State
United States of America
Pages from
640
Pages to
644
Pages count
5
BibTex
@article{BUT41429, author="Dana {Otevřelová} and Lubomír {Grmela} and Pavel {Tománek} and Jitka {Brüstlová}", title="Photoluminescence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells", journal="Proceedings of SPIE", year="2003", volume="5036", number="5036", pages="640--644", issn="0277-786X" }