Publication detail

Scanning near-field optical microscopy in semiconductor research

TOMÁNEK, P. BENEŠOVÁ, M. OTEVŘELOVÁ, D. DOBIS, P.

Original Title

Scanning near-field optical microscopy in semiconductor research

Type

journal article in Web of Science

Language

English

Original Abstract

Exploration of optical properties of materials and optical characterization of structure defects at the nanometer scale was impossible until recently due to the diffraction limit of light. With the invention of Scanning near-field optical microscopy (SNOM) the spatial resolution at the 50-100 nm level using visible or near infrared light is now possible.This review focuses on some applications of SNOM techniques of nondestructive, non-contact spectroscopic investigation of the structures.Throughout the review, weight is placed on how SNOM goes together with existing material characterization techniques, as well as how quantitative results can be obtained from SNOM measurements.

Keywords

near-field optics, scanning, microscopy, semiconductor, optical characterization, optical properties,

Authors

TOMÁNEK, P.; BENEŠOVÁ, M.; OTEVŘELOVÁ, D.; DOBIS, P.

RIV year

2004

Released

5. 9. 2004

Publisher

V S V CO

Location

Moscow, Russia

ISBN

0204-3467

Periodical

Physics of low-dimensional structures

Year of study

2004

Number

1/2

State

United States of America

Pages from

47

Pages to

53

Pages count

7

BibTex

@article{BUT42142,
  author="Pavel {Tománek} and Markéta {Benešová} and Dana {Otevřelová} and Pavel {Dobis}",
  title="Scanning near-field optical microscopy in semiconductor research",
  journal="Physics of low-dimensional structures",
  year="2004",
  volume="2004",
  number="1/2",
  pages="47--53",
  issn="0204-3467"
}