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PRIMETZHOFER, D. MARKIN, S. ZEPPENFELD, P. BAUER, P. PRŮŠA, S. KOLÍBAL, M. ŠIKOLA, T.
Original Title
Quantitative analysis of ultra thin layer growth by time-of-flight low energy ion scattering
Type
journal article - other
Language
English
Original Abstract
Time of flight low energy ion scattering is used to quantitatively characterize the growth mode of Au deposited on B. Information on the filling factor (surface area coverage) is deduced from the yield of backscattered ions and the spectrum height of scattered neutrals. From the variation of the filling factor with the nominal Au thickness, cluster growth is deduced. Information on the average cluster height is obtained from the energy distribution of scattered neutrals and the comparison with computer simulation. Finally, an estimate of the aspect ratios is obtained for the clusters from the filling factor and the cluster height.
Keywords
Low energy ion scattering, LEIS; Time-of-flight, ToF; Quantitative analysis
Authors
PRIMETZHOFER, D.; MARKIN, S.; ZEPPENFELD, P.; BAUER, P.; PRŮŠA, S.; KOLÍBAL, M.; ŠIKOLA, T.
RIV year
2008
Released
11. 1. 2008
ISBN
0003-6951
Periodical
Applied Physics Letters
Year of study
92
Number
1
State
United States of America
Pages from
011929-1
Pages to
011929-3
Pages count
3