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RŮŽIČKA, B., WILFERT, O.
Original Title
Residual Reflectivity of Amplification Media for Extended-Cavity Laser
Type
conference paper
Language
English
Original Abstract
This contribution presents experimental results obtained by deposition double-layer system made by means of electron-beam vacuum evaporation technique. We oriented our effort to short-wavelength 633 - 635 nm laser diodes. These devices are emitting close to the wavelength of traditional He-Ne lasers with an intention to use them in extended-cavity laser design for metrological purposes. The resulting reflectivities were evaluated by measuring a testing plate of GaAs and by measuring a "modulation depth" of a coated diode emission spectra. Our best results were reflectivities well below 10-4 and the repeatibility of the deposition process in a range not exceeding 2x10-4.
Keywords
semiconductor laser, laser chip, antireflection coating
Authors
RIV year
2002
Released
9. 9. 2002
Publisher
SPIE-The International Society for Optical Engineering
Location
Washington, USA
ISBN
0-8194-4686-6
Book
Seveth International Symposium on Laser Metrology Applied to Science, Industry, and Everyday Life
Edition number
1
Pages from
352
Pages to
356
Pages count
5
BibTex
@inproceedings{BUT4489, author="Bohdan {Růžička} and Otakar {Wilfert}", title="Residual Reflectivity of Amplification Media for Extended-Cavity Laser", booktitle="Seveth International Symposium on Laser Metrology Applied to Science, Industry, and Everyday Life", year="2002", number="1", pages="5", publisher="SPIE-The International Society for Optical Engineering", address="Washington, USA", isbn="0-8194-4686-6" }