Publication detail

Snap-back characteristics tuning of SCR-based semiconductor structures

BĚŤÁK, P. MUSIL, V.

Original Title

Snap-back characteristics tuning of SCR-based semiconductor structures

Type

journal article - other

Language

English

Original Abstract

Semiconductor structures having snap-back type of I-V characteristics are very useful in ESD (electrostatic discharge) protection design. ESD protection structures act as a protection of integrated circuits against the parasitic electrostatic discharge. The typical protection structure having the snap-back type of I-V characteristic is a SCR (silicon controlled rectifier) or a gate grounded NMOS transistor. This text is dealing with structures which enable tuning of I-V snapback characteristics. The simulated technology was CMOS very high voltage (VHVIC). The measurement was done for samples manufactured in 1.5um BiCMOS.

Keywords

SCR, snap-back, ESD

Authors

BĚŤÁK, P.; MUSIL, V.

RIV year

2008

Released

1. 4. 2008

ISBN

1109-9445

Periodical

WSEAS Transactions on Electronics

Year of study

4

Number

9

State

United States of America

Pages from

175

Pages to

180

Pages count

6

BibTex

@article{BUT45226,
  author="Petr {Běťák} and Vladislav {Musil}",
  title="Snap-back characteristics tuning of SCR-based semiconductor structures",
  journal="WSEAS Transactions on Electronics",
  year="2008",
  volume="4",
  number="9",
  pages="175--180",
  issn="1109-9445"
}