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PAVELKA, J., TANUMA, N., TACANO, M., ŠIKULA, J., MUSHA, T.
Original Title
Temperature dependence of 1/f noise in p- and n-InGaAs/InAlAs heterostructures
Type
journal article - other
Language
English
Original Abstract
The temperature dependence of Hooge parameter alfaH of the p- and n-InGaAs/InAlAs heterostructures was measured in 15K to 300K range. The p-type alfaH ~ 1 doesn’t change with temperature, the n-type alfaH ~ 2x10-3 is constant down to 150K and then increases about one order, probably due to the influence of traps.
Key words in English
InGaAs HEMT, 1/f noise
Authors
Released
1. 1. 2004
ISBN
1346-7239
Periodical
Research Bulletin of Meisei University – Physical Sciences and Engineering
Year of study
40
Number
1
State
Japan
Pages from
87
Pages to
93
Pages count
7
BibTex
@article{BUT45792, author="Jan {Pavelka} and Nobuhisa {Tanuma} and Munecazu {Tacano} and Josef {Šikula} and Toshimitsu {Musha}", title="Temperature dependence of 1/f noise in p- and n-InGaAs/InAlAs heterostructures", journal="Research Bulletin of Meisei University – Physical Sciences and Engineering", year="2004", volume="40", number="1", pages="7", issn="1346-7239" }