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ČECHAL, J. LUKSCH, J. KOŇÁKOVÁ, K. URBÁNEK, M. KOLÍBALOVÁ, E. ŠIKOLA, T.
Original Title
Morphology of cobalt layers on native SiO2 surfaces at elevated temperatures: formation of Co islands
Type
journal article - other
Language
English
Original Abstract
The influence of deposition and annealing temperature on the morphology of ultra-thin cobalt layers on the native SiO2 surfaces has been investigated using AFM and XPS. To provide well defined conditions, the SiO2 layer was cleaned by thermal annealing at 560 - 580 C which caused desorption of the carbonaceous compounds. The deposition of Co on the native SiO2 at room temperature leads to the formation of smooth uniform layers. Upon annealing of these layers at temperatures above 260 - 320 C Co islands are formed. The further annealing at temperatures higher than 500 C causes a desorption of Co atoms from the oxide surface. No diffusion of Co atoms through the native SiO2 layer during the annealing has been observed up to the detection limit of XPS. The deposition at elevated temperatures in the range of 360 - 430 C leads to the formation of separate cobalt islands randomly arranged on the surface.
Keywords
Cobalt, Co; Silicon dioxide, SiO2; Islands, XPS, Photoelectron spectroscopy; SPM, AFM, MFM.
Authors
ČECHAL, J.; LUKSCH, J.; KOŇÁKOVÁ, K.; URBÁNEK, M.; KOLÍBALOVÁ, E.; ŠIKOLA, T.
RIV year
2008
Released
1. 8. 2008
ISBN
0039-6028
Periodical
Surface Science
Year of study
602
Number
15
State
Kingdom of the Netherlands
Pages from
2693
Pages to
2698
Pages count
6
BibTex
@article{BUT47128, author="Jan {Čechal} and Jaroslav {Luksch} and Kateřina {Koňáková} and Michal {Urbánek} and Eva {Kolíbalová} and Tomáš {Šikola}", title="Morphology of cobalt layers on native SiO2 surfaces at elevated temperatures: formation of Co islands", journal="Surface Science", year="2008", volume="602", number="15", pages="2693--2698", issn="0039-6028" }