Publication detail

Study of Thermal stability of Ultrafine-grained Copper by means of Electron Back Scattering Diffraction

MAN, O. PANTĚLEJEV, L. KUNZ, L.

Original Title

Study of Thermal stability of Ultrafine-grained Copper by means of Electron Back Scattering Diffraction

Type

journal article - other

Language

English

Original Abstract

Thermal stability of ultrafine-grained (UFG) structure of 99.9% pure copper produced by eight equal channel angular pressing (ECAP) passes was studied. The annealing experiments were conducted at 180degC in a tube furnace under argon as a covering gas. The dwell times were in the range of 10 min to 120 min. The electron backscattering diffraction (EBSD) analyses were performed before and after annealing at exactly the same area in order to quantify the degree of decomposition of the UFG structure. Definition of grain boundaries was based on the misorientation angle of 1. More advanced analysis of the EBSD results based on a kernel average misorientation (KAM) parameter was performed. Inverse pole figure maps with included grain networks did not reveal any substantial changes of UFG microstructure due to annealing. Some shift in the KAM modus in comparison with the initial state was observed but its magnitude was found negligible. Also changes in texture were found to be minor. On the other hand the microhardness increases with increasing time of annealing.

Keywords

ultra-fine grained copper, thermal stability of microstructure, EBSD, grain size, texture

Authors

MAN, O.; PANTĚLEJEV, L.; KUNZ, L.

RIV year

2010

Released

25. 1. 2010

Publisher

The Japan Institute of Metals

Location

Japonsko

ISBN

1345-9678

Periodical

MATERIALS TRANSACTIONS

Year of study

51

Number

2

State

Japan

Pages from

209

Pages to

213

Pages count

5

BibTex

@article{BUT48360,
  author="Ondřej {Man} and Libor {Pantělejev} and Ludvík {Kunz}",
  title="Study of Thermal stability of Ultrafine-grained Copper by means of Electron Back Scattering Diffraction",
  journal="MATERIALS TRANSACTIONS",
  year="2010",
  volume="51",
  number="2",
  pages="209--213",
  issn="1345-9678"
}