Publication result detail

Low-Frequency Noise Characteristics of InGaAs/InAlAs Heterostructures

PAVELKA, J.; TANUMA, N.; TACANO, M.; ŠIKULA, J.; HANDEL, P.

Original Title

Low-Frequency Noise Characteristics of InGaAs/InAlAs Heterostructures

English Title

Low-Frequency Noise Characteristics of InGaAs/InAlAs Heterostructures

Type

WoS Article

Original Abstract

The low frequency noise of InGaAs/InAlAs heterostructures with various In concentration was measured in wide temperature range of 15K up to 450K and experimental characteristics compared with theoretical models of mobility fluctuations due to various scattering processes. Several p- and n-type doped lattice-matched In0.53Ga0.47As/In0.52Al0.48As samples prepared by NTT reveal Hooge parameter alpha(H) congruent to 1 and alpha(H) congruent to 2 x 10(-3), respectively, which is consistent with the 1/f energy partition fluctuations model. However, most of the n-type samples give alpha(H) values of 4x10(-6) to 3x10(-5) or slightly higher in case of In0.7Ga0.3As/In0.52Al0.48As pseudomorphic structures, which is closer to the quantum 1/f noise theory prediction of Hooge parameter about alpha(H) congruent to 10(-6). Using the TLM structures noise analysis we determined, that contact noise was almost negligible.

English abstract

The low frequency noise of InGaAs/InAlAs heterostructures with various In concentration was measured in wide temperature range of 15K up to 450K and experimental characteristics compared with theoretical models of mobility fluctuations due to various scattering processes. Several p- and n-type doped lattice-matched In0.53Ga0.47As/In0.52Al0.48As samples prepared by NTT reveal Hooge parameter alpha(H) congruent to 1 and alpha(H) congruent to 2 x 10(-3), respectively, which is consistent with the 1/f energy partition fluctuations model. However, most of the n-type samples give alpha(H) values of 4x10(-6) to 3x10(-5) or slightly higher in case of In0.7Ga0.3As/In0.52Al0.48As pseudomorphic structures, which is closer to the quantum 1/f noise theory prediction of Hooge parameter about alpha(H) congruent to 10(-6). Using the TLM structures noise analysis we determined, that contact noise was almost negligible.

Keywords

1/f noise; InGaAs; HFET; MODFET; HEMT

Key words in English

1/f noise; InGaAs; HFET; MODFET; HEMT

Authors

PAVELKA, J.; TANUMA, N.; TACANO, M.; ŠIKULA, J.; HANDEL, P.

RIV year

2010

Released

14.06.2009

Publisher

American Institute of Physics

Location

Melville, New York

ISBN

0094-243X

Periodical

AIP conference proceedings

Volume

1129

Number

1

State

United States of America

Pages from

183

Pages to

186

Pages count

4

BibTex

@article{BUT48538,
  author="Jan {Pavelka} and Nobuhisa {Tanuma} and Munecazu {Tacano} and Josef {Šikula} and Peter H. {Handel}",
  title="Low-Frequency Noise Characteristics of InGaAs/InAlAs Heterostructures",
  journal="AIP conference proceedings",
  year="2009",
  volume="1129",
  number="1",
  pages="183--186",
  issn="0094-243X"
}