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ČECHAL, J. MATLOCHA, T. POLČÁK, J. KOLÍBAL, M. TOMANEC, O. KALOUSEK, R. DUB, P. ŠIKOLA, T.
Original Title
Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis
Type
journal article - other
Language
English
Original Abstract
Deposition and oxidation of metallic gallium droplets on Si(111) was studied by angle resolved X-ray photoelectron spectroscopy. Two gallium peaks - Ga 3d and Ga 2p - were simultaneously measured in order to get an advantage of different inelastic mean free paths of photoelectrons from these two energy levels differing in binding energy by 1100 eV. Together with the angular dependent data it enhances the precision of the size characterization of Ga droplets and oxide thickness determination. A model for the calculation of theoretical intensities based on an ellipsoidal shape of droplets is presented and a simple procedure for estimation of droplet height and actual surface coverage based on measurement on a single emission angle is suggested.
Keywords
X-ray photoelectron spectroscopy, XPS; Gallium, Ga; Gallium Oxide, Ga2O3; Surface structures; Models; Calculations
Authors
ČECHAL, J.; MATLOCHA, T.; POLČÁK, J.; KOLÍBAL, M.; TOMANEC, O.; KALOUSEK, R.; DUB, P.; ŠIKOLA, T.
RIV year
2009
Released
30. 1. 2009
ISBN
0040-6090
Periodical
Thin Solid Films
Year of study
517
Number
6
State
Kingdom of the Netherlands
Pages from
1928
Pages to
1934
Pages count
7
BibTex
@article{BUT48893, author="Jan {Čechal} and Tomáš {Matlocha} and Josef {Polčák} and Miroslav {Kolíbal} and Ondřej {Tomanec} and Radek {Kalousek} and Petr {Dub} and Tomáš {Šikola}", title="Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis", journal="Thin Solid Films", year="2009", volume="517", number="6", pages="1928--1934", issn="0040-6090" }