Publication detail

Measurements and Theoretical Approximations of VA Characteristics MOSFETs

CHVÁTAL, M. ŠIKULA, J. SEDLÁKOVÁ, V. KNÁPEK, A.

Original Title

Measurements and Theoretical Approximations of VA Characteristics MOSFETs

Type

journal article - other

Language

English

Original Abstract

Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode.

Keywords

VA characteristic, MOSFET, electron density, diffusion current, drift current

Key words in English

VA characteristic, MOSFET, electron density, diffusion current, drift current

Authors

CHVÁTAL, M.; ŠIKULA, J.; SEDLÁKOVÁ, V.; KNÁPEK, A.

RIV year

2009

Released

2. 11. 2009

Publisher

TYPOservis Holešov

Location

Masarykova 650 76901 Holešov

ISBN

0447-6441

Periodical

Jemná mechanika a optika

Year of study

54

Number

10

State

Czech Republic

Pages from

278

Pages to

279

Pages count

2

BibTex

@article{BUT49126,
  author="Miloš {Chvátal} and Josef {Šikula} and Vlasta {Sedláková} and Alexandr {Knápek}",
  title="Measurements and Theoretical Approximations of VA Characteristics MOSFETs",
  journal="Jemná mechanika a optika",
  year="2009",
  volume="54",
  number="10",
  pages="278--279",
  issn="0447-6441"
}