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FRANTA, D. NEČAS, D. OHLÍDAL, I. HRDLIČKA, M. PAVLIŠTA, M. FRUMAR, M. OHLÍDAL, M.
Original Title
Combined method of spectroscopic ellipsometry and photometry as an efficient tool for the optical characterisation of chalcogenide thin films
Type
journal article in Web of Science
Language
English
Original Abstract
The optical characterisation of the As33Se67 and Ge2Sb2Te5 chalcogenide thin films is carried out using the combined method of VASE and SR. This method permits to determine both structural and dispersion parameters describing the thin films exhibiting various defects. The structural model is based on including roughness, overlayers and thickness non-uniformity. The dispersion models are based on parametrisation of the joint density of states. These models, unlike the classical models derived from the Lorentz oscillator model, can describe finite bands which allows to introduce a parameter proportional to the density of electrons. It is shown that this method enables to investigate quantitatively changes in the electronic structure of the materials caused by phase transitions which is demonstrated on the Ge2Sb2Te5. It is shown that the combined method with including true structural and dispersion models is a powerful tool for the optical characterisation of thin films exhibiting disordered structure.
Keywords
Ellipsometry; Photometry; Chalcogenige; Thin film
Authors
FRANTA, D.; NEČAS, D.; OHLÍDAL, I.; HRDLIČKA, M.; PAVLIŠTA, M.; FRUMAR, M.; OHLÍDAL, M.
RIV year
2009
Released
25. 12. 2009
Publisher
NATL INST OPTOELECTRONICS
Location
BUCHAREST-MAGURELE 76900, ROMANIA
ISBN
1454-4164
Periodical
Journal of Optoelectronics and Advanced Materials
Year of study
11
Number
12
State
Romania
Pages from
1891
Pages to
1898
Pages count
8
BibTex
@article{BUT49384, author="Daniel {Franta} and David {Nečas} and Ivan {Ohlídal} and Martin {Hrdlička} and Martin {Pavlišta} and Miloslav {Frumar} and Miloslav {Ohlídal}", title="Combined method of spectroscopic ellipsometry and photometry as an efficient tool for the optical characterisation of chalcogenide thin films", journal="Journal of Optoelectronics and Advanced Materials", year="2009", volume="11", number="12", pages="1891--1898", issn="1454-4164" }