Publication detail

Strain mapping by Scanning Low Energy Electron Microscopy

MIKMEKOVÁ, Š. MAN, O. PANTĚLEJEV, L. HOVORKA, M. MÜLLEROVÁ, I. FRANK, L. KOUŘIL, M.

Original Title

Strain mapping by Scanning Low Energy Electron Microscopy

Type

journal article - other

Language

English

Original Abstract

The use of the scanning low energy electron microscopy (SLEEM) has been slowly making its way into the field of materials science, hampered not by limitations in the technique but rather by relative scarcity of these instruments in research institutes and laboratories. This paper reports the results obtained from an investigation of the microstructure of ultra fine-grained (UFG) copper fabricated using equal channel angular pressing (ECAP) method, namely in the as-pressed state and after annealing. SLEEM is very sensitive to the perfection of crystal lattice and using SLEEM, local strain can be effectively imaged.

Keywords

scanning low energy electron microscopy (SLEEM), contrast of crystal orientation, microscopic strain

Authors

MIKMEKOVÁ, Š.; MAN, O.; PANTĚLEJEV, L.; HOVORKA, M.; MÜLLEROVÁ, I.; FRANK, L.; KOUŘIL, M.

RIV year

2010

Released

1. 3. 2011

Publisher

Trans Tech Publications

Location

Switzerland

ISBN

1013-9826

Periodical

Key Engineering Materials (print)

Year of study

465

Number

1

State

Swiss Confederation

Pages from

338

Pages to

341

Pages count

4

BibTex

@article{BUT49965,
  author="Šárka {Mikmeková} and Ondřej {Man} and Libor {Pantělejev} and Miloš {Hovorka} and Ilona {Müllerová} and Luděk {Frank} and Miloslav {Kouřil}",
  title="Strain mapping by Scanning Low Energy Electron Microscopy",
  journal="Key Engineering Materials (print)",
  year="2011",
  volume="465",
  number="1",
  pages="338--341",
  issn="1013-9826"
}