Publication detail

Low energy focused ion beam milling of silicon and germanium nanostructures

KOLÍBAL, M. MATLOCHA, T. VYSTAVĚL, T. ŠIKOLA, T.

Original Title

Low energy focused ion beam milling of silicon and germanium nanostructures

Type

journal article - other

Language

English

Original Abstract

In this paper focused ion beam milling of very shallow nanostructures in silicon and germanium by low energy Ga+ ions is studied with respect to ion beam and scanning parameters. It has been found that, using low energy ions, many scanning artefacts can be avoided and, additionally, some physical effects (e.g. redeposition and ion channelling) are significantly suppressed. The structures milled with low energy ions suffer less subsurface ion beam damage (amorphization, formation of voids) and are thus more suitable for selected applications in nanotechnology.

Keywords

FIB milling; Si; Ge

Authors

KOLÍBAL, M.; MATLOCHA, T.; VYSTAVĚL, T.; ŠIKOLA, T.

RIV year

2011

Released

2. 2. 2011

ISBN

0957-4484

Periodical

NANOTECHNOLOGY

Year of study

22

Number

10

State

United Kingdom of Great Britain and Northern Ireland

Pages from

105304-1

Pages to

105304-8

Pages count

8