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KOLÍBAL, M. MATLOCHA, T. VYSTAVĚL, T. ŠIKOLA, T.
Original Title
Low energy focused ion beam milling of silicon and germanium nanostructures
Type
journal article - other
Language
English
Original Abstract
In this paper focused ion beam milling of very shallow nanostructures in silicon and germanium by low energy Ga+ ions is studied with respect to ion beam and scanning parameters. It has been found that, using low energy ions, many scanning artefacts can be avoided and, additionally, some physical effects (e.g. redeposition and ion channelling) are significantly suppressed. The structures milled with low energy ions suffer less subsurface ion beam damage (amorphization, formation of voids) and are thus more suitable for selected applications in nanotechnology.
Keywords
FIB milling; Si; Ge
Authors
KOLÍBAL, M.; MATLOCHA, T.; VYSTAVĚL, T.; ŠIKOLA, T.
RIV year
2011
Released
2. 2. 2011
ISBN
0957-4484
Periodical
NANOTECHNOLOGY
Year of study
22
Number
10
State
United Kingdom of Great Britain and Northern Ireland
Pages from
105304-1
Pages to
105304-8
Pages count
8