Publication detail

Silicon-silicon dioxide nanostructure in electrostatic field

HRUŠKA, P. GRMELA, L.

Original Title

Silicon-silicon dioxide nanostructure in electrostatic field

Type

journal article - other

Language

English

Original Abstract

Paper presents a numerical analysis of quantum states and probability function of a Si-SiO2 nanostructure in varying electrostatic field. The position of probability function peak is traced, and bias, under which it abandons the structure is determined. Variation of the ground state energy with the bias is also examined. The Poisson-Schrodinger model of Comsol Multiphysics program is devised and employed. The results would help understanding the electronic properties and behavior ultrascaled Si-SiO2 memory devices utilizing semiconducting quantum dots and Si single nanocrystals, to mention only one application.

Keywords

nanostructure, Si-SiO2 quantum dot, discharging bias, poisson-Schrödinger numerical analysis, Comsol Multiphysics

Authors

HRUŠKA, P.; GRMELA, L.

RIV year

2010

Released

14. 9. 2010

Publisher

TU Košice

Location

Košice

ISBN

1335-8243

Periodical

Acta Electrotechnica et Informatica

Year of study

10

Number

3

State

Slovak Republic

Pages from

22

Pages to

25

Pages count

4

BibTex

@article{BUT50849,
  author="Pavel {Hruška} and Lubomír {Grmela}",
  title="Silicon-silicon dioxide nanostructure in electrostatic field",
  journal="Acta Electrotechnica et Informatica",
  year="2010",
  volume="10",
  number="3",
  pages="22--25",
  issn="1335-8243"
}